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2SK3296 - MOSFET

Key Features

  • 4.5 V drive available Low on-state resistance RDS(on)1 = 12m Low gate charge QG = 30 nC TYP. (ID = 35 A, VDD = 16 V, VGS = 10 V) +0.2 5.28-0.2 +0.1 1.27-0.1 MOSFET TO-263 +0.1 1.27-0.1 +0.2 4.57-0.2 Unit: mm +0.2 8.7-0.2 +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 Surface mount device available 2.54 5.08 +0.1 -0.1 +0.2 2.54-0.2 Built-in gate protection diode +0.2 15.25-0.2 +0.2 2.54-0.2 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Dr.

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Datasheet Details

Part number 2SK3296
Manufacturer Guangdong Kexin Industrial
File Size 73.72 KB
Description MOSFET
Datasheet download datasheet 2SK3296 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com SMD Type MOS Field Effect Transistor 2SK3296 Features 4.5 V drive available Low on-state resistance RDS(on)1 = 12m Low gate charge QG = 30 nC TYP. (ID = 35 A, VDD = 16 V, VGS = 10 V) +0.2 5.28-0.2 +0.1 1.27-0.1 MOSFET TO-263 +0.1 1.27-0.1 +0.2 4.57-0.2 Unit: mm +0.2 8.7-0.2 +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 Surface mount device available 2.54 5.08 +0.1 -0.1 +0.2 2.54-0.2 Built-in gate protection diode +0.2 15.25-0.2 +0.2 2.54-0.2 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TA=25 TC=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Tch Tstg Symbol VDSS VGSS ID Idp * PD Rating 20 20 35 140 1.