GSMEB2516Q Datasheet (Globaltech) - Dual N-Channel MOSFET

GSMEB2516Q, Dual N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

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GSMEB2516Q Features

* 20V, 11A, RDS(ON)=8.2mΩ@VGS=4.5V

* Improved dv/dt capability

* Fast switching

* G-S ESD Protection Diode Embedded

* Green Device Available

* DFN2X3-6L package design Applications

* Handheld Instruments

* POL Applications

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