GSM6911P Datasheet - Globaltech

GSM6911P P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

GSM6911P Features

* -60V, -3.1A, RDS(ON)=190mΩ@VGS=-10V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* Green Device Available

* SOT-23 package design Applications

* Motor Drive

* Power Tools

* LED Lighting Packages & Pin As

GSM6911P Datasheet (622.32 KB)

GSM6911P Datasheet Preview — Preview of GSM6911P PDF

Datasheet Details

Part number:

GSM6911P

Manufacturer:

Globaltech

File Size:

622.32 KB

Description:

P-channel mosfet.

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