GSM6332 Datasheet (Globaltech)

GSM6332, MOSFET

The GSM6332 is the N and P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON) , low gate charge.

These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-li

GSM6332 Features

* N-Channel 20V/1.0A,RDS(ON)=280mΩ@VGS=4.5V 20V/0.8A,RDS(ON)=340mΩ@VGS=2.5V 20V/0.7A,RDS(ON)=580mΩ@VGS=1.8V

* P-Channel -20V/-1.0A,RDS(ON)= 600mΩ@VGS=-4.5V -20V/-0.8A,RDS(ON)= 800mΩ@VGS=-2.5V -20V/-0.7A,RDS(ON)= 1440mΩ@VGS=-1.8V

* Low-Voltage Operation

* High-Speed Ci