GSM6562 Datasheet (Globaltech) - N-Channel Power MOSFET

GSM6562, N-Channel Power MOSFET

GSM6562, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Packages & Pin

GSM6562 Features

* 30V/3.6A,RDS(ON)=70mΩ@VGS=10V

* 30V/3.0A,RDS(ON)=78mΩ@VGS=4.5V

* 30V/2.2A,RDS(ON)=95mΩ@VGS=2.5V

* Super high density cell design for extremely low RDS (ON)

* TSOP-6 package design Applications

* Power Management in Note book

* LED Display