Datasheet Details
- Part number
- GB02SLT12-252
- Manufacturer
- GeneSiC
- File Size
- 468.71 KB
- Datasheet
- GB02SLT12-252-GeneSiC.pdf
- Description
- Silicon Carbide Schottky Diode
GB02SLT12-252 Description
GB02SLT12-252 1200 V SiC MPS™ Diode Silicon Carbide Schottky Diode .
GB02SLT12-252 Features
* High Avalanche (UIS) Capability
* Enhanced Surge Current Capability
* Superior Figure of Merit QC/IF
* Low Thermal Resistance
* 175 °C Maximum Operating Temperature
* Temperature Independent Switching Behavior
* Positive Temperature Coefficie
GB02SLT12-252 Applications
* Boost Diode in Power Factor Correction (PFC)
* Switched Mode Power Supplies (SMPS)
* AC-DC Converters & DC-DC Converters
* Freewheeling / Anti-parallel Diode in Inverters
* Solar Micro-inverters
* LED and HID Lighting
* Medical Imaging System
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