GB01SHT12-CAL High Temperature Silicon Carbide Power Schottky Diode

GeneSiC

Description

High Temperature Silicon Carbide Power Schottky Diode .

📥 Download Datasheet

GB01SHT12-CAL Datasheet Preview — Preview of GB01SHT12-CAL PDF

Datasheet Specifications

Part number: GB01SHT12-CAL
Manufacturer: GeneSiC
File Size: 281.43 KB
Datasheet: GB01SHT12-CAL-GeneSiC.pdf
Description: High Temperature Silicon Carbide Power Schottky Diode

Features

* 1200 V Schottky rectifier
* 210°C maximum operating temperature
* Zero reverse recovery charge
* Superior surge current capability
* Positive temperature coefficient of VF
* Temperature independent switching behavior
* Lowest figure of merit QC/IF
* Available screen

Applications

* Down Hole Oil Drilling
* Geothermal Instrumentation
* Solenoid Actuators
* General Purpose High-Temperature Switching
* Amplifiers
* Solar Inverters
* Switched-Mode Power Supply (SMPS)
* Power Factor Correction (PFC) Maximum Ratings at Tj = 210 °C, unless otherwise

GB01SHT12-CAL Distributors

📁 Related Datasheet

GB02N120 GB042 GB0502PFV1-8 GB05XP120KTPBF GB082A

📌 All Tags

GB01SHT12-CAL High Temperature Silicon Carbide Power Schottky Diode GeneSiC

GeneSiC GB01SHT12-CAL-like datasheet