GB01SLT12-252 Silicon Carbide Schottky Diode

GeneSiC

Description

GB01SLT12-252 1200 V SiC MPS™ Diode Silicon Carbide Schottky Diode .

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Datasheet Specifications

Part number: GB01SLT12-252
Manufacturer: GeneSiC
File Size: 452.29 KB
Datasheet: GB01SLT12-252-GeneSiC.pdf
Description: Silicon Carbide Schottky Diode

Features

* High Avalanche (UIS) Capability
* Enhanced Surge Current Capability
* Superior Figure of Merit QC/IF
* Low Thermal Resistance
* 175 °C Maximum Operating Temperature
* Temperature Independent Switching Behavior
* Positive Temperature Coefficie

Applications

* Boost Diode in Power Factor Correction (PFC)
* Switched Mode Power Supplies (SMPS)
* AC-DC Converters & DC-DC Converters
* Freewheeling / Anti-parallel Diode in Inverters
* Solar Micro-inverters
* LED and HID Lighting
* Medical Imaging System

GB01SLT12-252 Distributors

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GB01SLT12-252 Silicon Carbide Schottky Diode GeneSiC

GeneSiC GB01SLT12-252-like datasheet