High Temperature Silicon Carbide Power Schottky Diode
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GB01SLT12-220
Silicon Carbide Power Schottky Diode
Features
•1200 V Schottky rectifier •175 °C maximum operating temperature •Zero reverse recovery charge •Positive temperature coefficient of VF • Extremely fast switching speeds • Temperature independent switching behavior • Lowest figure of merit QC/IF
Package
•RoHS Compliant
VRRM I
F
QC
Case PIN 1
1 2
PIN 2
TO – 220AC
= 1200 V = 1A = 4 nC
CASE
Advantages
•Improved circuit efficiency (Lower overall cost) •Low switching losses
•Ease of paralleling devices without thermal runaway •Smaller heat sink requirements •Industry's lowest reverse recovery charge •Industry's lowest device capacitance •Ideal for output switching of power supplies •Best in class reverse leakage current at operating temperature
Applications
•Powe
GB01SLT12-220 Datasheet
