GB01SHT06-CAL - High Temperature Silicon Carbide Power Schottky Diode

GeneSiC

Key Features

650 V Schottky rectifier.
210 °C maximum operating temperature.
Zero reverse recovery charge.
Superior surge current capability.
Positive temperature coefficient of VF.
Temperature independent switching behavior.
Lowest figure of merit QC/IF.
Available screened to Mil-PRF-19500 Die Datasheet GB01SHT06-CAL VRRM IF @ 25 oC QC = 650 V = 2.5 A = 7 nC Die Size = 0.9 mm x 0.9 mm Advantages.
High temperature operation.
Improved circuit effic.

GB01SHT06-CAL high temperature silicon carbide power schottky diode by GeneSiC - Datasheet Preview

Datasheet Details

Part number	GB01SHT06-CAL
Manufacturer	GeneSiC
File Size	287.26 KB
Description	High Temperature Silicon Carbide Power Schottky Diode
Datasheet	GB01SHT06-CAL Datasheet

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Full PDF Text Transcription (Reference)

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High Temperature Silicon Carbide Power Schottky Diode Features  650 V Schottky rectifier  210 °C maximum operating temperature  Zero reverse recovery charge  Superior surge current capability  Positive temperature coefficient of VF  Temperature independent switching behavior  Lowest figure of merit QC/IF  Available screened to Mil-PRF-19500 Die Datasheet GB01SHT06-CAL VRRM IF @ 25 oC QC = 650 V = 2.5 A = 7 nC Die Size = 0.9 mm x 0.