GB02SHT01-46 High Temperature Silicon Carbide Power Schottky Diode

GeneSiC

Description

High Temperature Silicon Carbide Power Schottky Diode .

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Datasheet Specifications

Part number: GB02SHT01-46
Manufacturer: GeneSiC
File Size: 371.92 KB
Datasheet: GB02SHT01-46-GeneSiC.pdf
Description: High Temperature Silicon Carbide Power Schottky Diode

Features

* 100 V Schottky rectifier
* 210 °C maximum operating temperature
* Zero reverse recovery charge
* Superior surge current capability
* Positive temperature coefficient of VF
* Temperature independent switching behavior
* Lowest figure of merit QC/IF
* Available screen

Applications

* Down Hole Oil Drilling
* Geothermal Instrumentation
* Solenoid Actuators
* General

GB02SHT01-46 Distributors

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GB02SHT01-46 High Temperature Silicon Carbide Power Schottky Diode GeneSiC

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