GT025N06, GT025N06AT - N-Channel Enhancement Mode Power MOSFET

The GT025N06 by GOFORD is a N-Channel Enhancement Mode Power MOSFET. Below is the official datasheet preview.

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GT025N06 N-Channel Enhancement Mode Power MOSFET by GOFORD - Datasheet Preview — Official preview page of the **GT025N06** N-Channel Enhancement Mode Power MOSFET datasheet (GOFORD).

Datasheet Details

Part number	GT025N06, GT025N06AT
Manufacturer	GOFORD
File Size	634.07 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	GT025N06AT-GOFORD.pdf
Note	This datasheet PDF includes multiple part numbers: GT025N06, GT025N06AT. Please refer to the document for exact specifications by model.
Additional preview pages of the GT025N06 datasheet.

GT025N06 Product details

Description

The GT025N06AT uses advanced trench technology to provide excellent RDS(ON) , low gate charge.It can be used in a wide variety of applications.General

Features

l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 60V 170A < 2.5mΩ < 3.2mΩ l 100% Avalanche Tested l RoHS Compliant Schematic Diagram.

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Published: Nov 3, 2024 |