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GT023N10, GT023N10M - N-Channel Enhancement Mode Power MOSFET

The GT023N10 by GOFORD is a N-Channel Enhancement Mode Power MOSFET. Below is the official datasheet preview.

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Official preview page of the GT023N10 N-Channel Enhancement Mode Power MOSFET datasheet (GOFORD).

Datasheet Details

Part number GT023N10, GT023N10M
Manufacturer GOFORD
File Size 945.12 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet GT023N10M-GOFORD.pdf
Note This datasheet PDF includes multiple part numbers: GT023N10, GT023N10M.
Please refer to the document for exact specifications by model.
Additional preview pages of the GT023N10 datasheet.

GT023N10 Product details

Description

The GT023N10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge.It can be used in a wide variety of applications.General

Features

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