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GT007N04 - N-Channel Enhancement Mode Power MOSFET

Download the GT007N04 datasheet PDF. This datasheet also covers the GT007N04TL variant, as both devices belong to the same n-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Key Features

  • l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 40V 285A < 1.5mΩ < 2.0mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram D.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (GT007N04TL-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number GT007N04
Manufacturer GOFORD
File Size 737.79 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet GT007N04 Datasheet

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Other Datasheets by GOFORD

Part Number Description
GT007N04TL N-Channel Enhancement Mode Power MOSFET
GT013N04 N-Channel Enhancement Mode Power MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
GT007N04TL N-Channel Enhancement Mode Power MOSFET Description The GT007N04TL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 40V 285A < 1.5mΩ < 2.