GT013N04 Datasheet Text
GT013N04T
N-Channel Enhancement Mode Power MOSFET
Description
The GT013N04T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V)
40V 220A < 2.5mΩ l 100% Avalanche Tested l RoHS pliant
Schematic diagram
Application l Power switch l DC/DC converters
Ordering Information
Device GT013N04T
Package TO-220
Marking...