Datasheet4U Logo Datasheet4U.com

G400P06T P-Channel Enhancement Mode Power MOSFET

G400P06T Description

G400P06T P-Channel Enhancement Mode Power MOSFET .
The G400P06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

📥 Download Datasheet

Preview of G400P06T PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
G400P06T
Manufacturer
GOFORD
File Size
897.80 KB
Datasheet
G400P06T-GOFORD.pdf
Description
P-Channel Enhancement Mode Power MOSFET

📁 Related Datasheet

  • G4000EC450 - Anode Shorted Gate Turn-Off Thyristor (IXYS)
  • G4000EF250 - Anode Shorted Gate Turn-Off Thyristor (IXYS)
  • G400SD - SCHOTTKY BARRIER DIODE (GTM)
  • G40 - Voltage-Controlled Attenuator Module (MACOM)
  • G4010E - DC AXIAL FANS (Mechatronics)
  • G4010H - DC AXIAL FANS (Mechatronics)
  • G4010L - DC AXIAL FANS (Mechatronics)
  • G4010M - DC AXIAL FANS (Mechatronics)

📌 All Tags

GOFORD G400P06T-like datasheet