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G400P06 - P-Channel Enhancement Mode Power MOSFET

Download the G400P06 datasheet PDF (G400P06T included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for p-channel enhancement mode power mosfet.

Description

excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Features

  • l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l 100% Avalanche Tested l RoHS Compliant -60V -32A < 40mΩ Schematic diagram.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (G400P06T-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number G400P06
Manufacturer GOFORD
File Size 897.80 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G400P06 Datasheet

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Other Datasheets by GOFORD
  • G400P06T - P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

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G400P06T P-Channel Enhancement Mode Power MOSFET Description The G400P06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
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