G30N03, G30N03D3 N-Channel Trench MOSFET

Description

G30N03D3 N-Channel Enhancement Mode Power MOSFET .
The G30N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

Datasheet Specifications

Part number: G30N03, G30N03D3
Manufacturer: GOFORD
File Size: 612.74 KB
Datasheet: G30N03D3-GOFORD.pdf
Description: N-Channel Trench MOSFET
Note: This datasheet PDF includes multiple part numbers: G30N03, G30N03D3.
Please refer to the document for exact specifications by model.

Features

* VDS
* ID (at VGS = 10V)
* RDS(ON) (at VGS = 10V)
* RDS(ON) (at VGS = 4.5V)
* 100% Avalanche Tested

G30N03 Distributors

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