Datasheet Specifications
- Part number
- G30N60A4D
- Manufacturer
- Fairchild Semiconductor
- File Size
- 209.91 KB
- Datasheet
- G30N60A4D-FairchildSemiconductor.pdf
- Description
- SMPS Series N-Channel IGBT
Description
HGTG30N60A4D Data Sheet September 2004 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high volta.
Features
* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49343. The diode used inG30N60A4D Distributors
📁 Related Datasheet
📌 All Tags