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G30N02 N-Channel MOSFET

G30N02 Description

GOFORD .
The G30N02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

G30N02 Features

* VDSS RDS(ON) ID @4.5V (Typ) 20V 10.5mΩ 30 A
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipation
* Special process technology for high E

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Datasheet Details

Part number
G30N02
Manufacturer
GOFORD
File Size
1.63 MB
Datasheet
G30N02-GOFORD.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET GOFORD
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