G2012 N-Channel Enhancement Mode Power MOSFET

Description

GOFORD G2012 N-Channel Enhancement Mode Power MOSFET .
The G2012 uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

Datasheet Specifications

Features

* VDS
* ID (at VGS = 10V)
* RDS(ON) (at VGS = 4.5V)
* RDS(ON) (at VGS = 2.5V)
* 100% Avalanche Tested

G2012 Distributors

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GOFORD G2012-like datasheet