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G2003A N-Channel Enhancement Mode Power MOSFET

G2003A Description

GOFORD G2003A .
The G2003A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

G2003A Features

* VDS = 190V,ID =3A RDS(ON) < 540mΩ @ VGS=10V RDS(ON) < 560mΩ @ VGS=10V (Typ:430mΩ) (Typ:440mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Excellent package for good heat dissipation
* RoHS Compliant Schematic Diagram

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Datasheet Details

Part number
G2003A
Manufacturer
GOFORD
File Size
1.23 MB
Datasheet
G2003A-GOFORD.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET GOFORD
GOFORD G2003A-like datasheet