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G10N03S - N-Channel Enhancement Mode Power MOSFET

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Datasheet Details

Part number	G10N03S
Manufacturer	GOFORD
File Size	683.33 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	G10N03S-GOFORD.pdf

G10N03S Product details

Description

The G10N03S uses advanced trench technology to provide excellent RDS(ON) , low gate charge.It can be used in a wide variety of applications.General

Features

l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 30V 13A < 9mΩ < 16mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram.

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Published: Nov 20, 2024 |