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G10N03S N-Channel Enhancement Mode Power MOSFET

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Description

G10N03S N-Channel Enhancement Mode Power MOSFET .
The G10N03S uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

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Datasheet Specifications

Part number: G10N03S
Manufacturer: GOFORD
File Size: 683.33 KB
Datasheet: G10N03S-GOFORD.pdf
Description: N-Channel Enhancement Mode Power MOSFET

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G10N03S N-Channel Enhancement Mode Power MOSFET GOFORD

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