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G1006A N-Channel MOSFET

G1006A Description

GOFORD .
The G1006A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

G1006A Features

* VDSS RDS(ON) ID @10V (Typ) 100V 140 mΩ 6A
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Excellent package for good heat dissipation

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Datasheet Details

Part number
G1006A
Manufacturer
GOFORD
File Size
2.90 MB
Datasheet
G1006A-GOFORD.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET GOFORD
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