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G1003B N-Channel MOSFET

G1003B Description

GOFORD G1003B General .
The G1003B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.

G1003B Features

* VDSS RDS(ON) RDS(ON) ID @10V (Typ) @ 4.5V(Typ) 100V 135 mΩ 145mΩ 5A
* High Power and current handing capability
* RoHS Compliant

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Datasheet Details

Part number
G1003B
Manufacturer
GOFORD
File Size
1.96 MB
Datasheet
G1003B-GOFORD.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET GOFORD
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