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TIP117 - PNP Epitaxial Silicon Darlington Transistor

TIP117 Description

Production specification PNP Epitaxial Silicon Darlington Transistor TIP117 .

TIP117 Features

* Monolithic Construction With Built in Base -Emitter Shunt Resistors. Pb Lead-free
* Complementary to TIP112.
* High DC Current Gain:hFE=1000@VCE=-4V,IC=-1A.
* Low Collector-Emitter Saturation Voltage.
* Industrial Use. TO-220AB MAXIMUM RATING operating temperature range

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Datasheet Details

Part number
TIP117
Manufacturer
GME
File Size
195.69 KB
Datasheet
TIP117-GME.pdf
Description
PNP Epitaxial Silicon Darlington Transistor

📁 Related Datasheet

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PNP Epitaxial Silicon Darlington Transistor GME
GME TIP117-like datasheet