Datasheet4U Logo Datasheet4U.com

2SC2712 - Silicon NPN Transistor

Features

  • Low noise：NF=1dB (Typ. ),10 dB(Max).
  • Complementary to 2SA1162 Pb Lead-free.
  • High voltage and high current.
  • Excellent hFE linearity 2SC2712.

📥 Download Datasheet

📁 Similar Datasheet

  • 2SC2712 - Silicon NPN Transistor (Toshiba Semiconductor)
  • 2SC2712 - NPN TRANSISTOR (AiT Semiconductor)
  • 2SC2712 - NPN Transistor (INCHANGE)
  • 2SC2712 - AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR (UTC)
  • 2SC2712 - Silicon NPN Transistors (Weitron Technology)
  • 2SC2712 - Silicon NPN Transistor (Kexin)
  • 2SC2712 - NPN Transistor (SeCoS)
  • 2SC2712 - BIPOLAR TRANSISTORS (Rectron)
  • 2SC2712 - TRANSISTOR (Jin Yu Semiconductor)
  • 2SC2712 - NPN Transistor (WEJ)
Other Datasheets by GME
  • 2SC2714 - Silicon Transistor
  • 2SC2715 - NPN Transistor
  • 2SC2073 - NPN Triple Didduesd Planar Silicon Transistor
  • 2SC2411 - Silicon Transistor
  • 2SC2412 - Silicon Epitaxial Planar Transistor
  • 2SC2812 - Silicon Epitaxial Planar Transistor
  • 2SC2859 - Silicon Transistor
  • 2SC2873 - Silicon NPN Transistor

Full PDF Text Transcription

Click to expand full text
Production specification Silicon Epitaxial Planar Transistor FEATURES  Low noise：NF=1dB (Typ.),10 dB(Max)  Complementary to 2SA1162 Pb Lead-free  High voltage and high current  Excellent hFE linearity 2SC2712 APPLICATIONS  Audio frequency general purpose amplifier applications SOT-23 ORDERING INFORMATION Type No. Marking 2SC2712 LO/LY/LG/LL Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 60 VCEO Collector-Emitter Voltage 50 VEBO Emitter-Base Voltage 5 IC Collector Current -Continuous 150 IB Base current 30 PC Collector Dissipation 150 Tj,Tstg Junction and Storage Temperature -55 to +125 Units V V V mA mA mW ℃ C021 Rev.A www.gmesemi.
Published: |