2SC2073
FEATURES z High Breakdown Voltage(VCBO≥900V). z Fast Switching Speed. z Wide ASO.
Pb
Lead-free
TO-220AB
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter
Value
Unit
VCBO
Collector-Base Voltage
900 V
VCEO VEBO IC IB PC Tj,Tstg
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Continuous Pulse
Base Crrent
Collector Dissipation Junction and Storage Temperature
Ta=25℃ Tc=25℃
800 V
7V 1.5
A 5 0.8 A 2
W 40 -55 to +150 ℃
X033 Rev.A
.gmicroelec. 1
Production specification
NPN Triple Didduesd Planar Silicon Transistor
ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified.
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base Breakdown Voltage V (BR) CBO IC=1m A,IE=0
Collector-emitter Breakdown Voltage V (BR) CEO IC=5m A,IB=0
Emitter-base...
