2SC2411
FEATURES
- Power dissipation: PCM=200Mw.
- High ICM(MAX.),I CM(MAX.)=0.5m A.
- Low VCE(sat)。
- plements the 2SA1036.
Pb
Lead-free
APPLICATIONS
- NPN Silicon Epitaxial Planar Transistor.
ORDERING INFORMATION
Type No.
Marking
CP/CQ/CR
SOT-23
Package Code SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
VCEO VEBO IC PC Tj,Tstg
Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature
32 5 500 200 -55 to+150
Units V V V m A m W ℃
C097 Rev.A
.gmesemi.
Production specification
Silicon Epitaxial Planar Transistor
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Collector-base breakdown voltage Collector-emitter breakdown voltage
Symbol Test conditions V(BR)CBO IC=100μA,IE=0 V(BR)CEO IC=1m...
