MRF7S18125BHR3 - RF Power Field Effect Transistors

Freescale Semiconductor

The MRF7S18125BHR3 by Freescale Semiconductor is a RF Power Field Effect Transistors. Below is the official datasheet preview.

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MRF7S18125BHR3 RF Power Field Effect Transistors by Freescale Semiconductor - Datasheet Preview — Official preview page of the **MRF7S18125BHR3** RF Power Field Effect Transistors datasheet (Freescale Semiconductor).

Datasheet Details

Part number	MRF7S18125BHR3
Manufacturer	Freescale Semiconductor
File Size	511.70 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF7S18125BHR3_FreescaleSemiconductor.pdf
Additional preview pages of the MRF7S18125BHR3 datasheet.

MRF7S18125BHR3 Product details

Description

1 μF, 50 V Chip Capacitor 4.7 μF, 50 V Chip Capacitors 220 μF, 63 V Electrolytic Chip Capacitor 6.8 pF Chip Capacitors 1 pF Chip Capacitors 0.2 pF Chip Capacitors 10 kΩ, 1/4 W Chip Resistors 10 Ω, 1/4 W Chip Resistor Part Number 12065G105AT2A GRM55ER71H475KA01L 2222 136 68221 ATC100B6R8BT500XT ATC100B1R0BT500XT ATC100B0R2BT500XT CRCW12061001FKEA CRCW120610R1FKEA Manufacturer AVX Murata Vishay ATC ATC ATC Vishay Vishay MRF7S18125BHR3 MRF7S18125BHSR3 4 RF Device Data Freescale Semiconductor www.

Features

Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Integrated ESD Protection.
RoHS Compliant.
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF7S18125BHR3 MRF7S18125BHSR3 1930- 1990 MHz, 125 W CW, 28 V GSM, GSM EDGE.

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Published: Jul 16, 2009 |