MRF7S19100NBR1, MRF7S19100NR1 - RF Power Field Effect Transistors

Motorola Semiconductor

The MRF7S19100NBR1 by Motorola Semiconductor is a RF Power Field Effect Transistors. Below is the official datasheet preview.

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MRF7S19100NBR1 RF Power Field Effect Transistors by Motorola Semiconductor - Datasheet Preview — Official preview page of the **MRF7S19100NBR1** RF Power Field Effect Transistors datasheet (Motorola Semiconductor).

Datasheet Details

Part number	MRF7S19100NBR1, MRF7S19100NR1
Manufacturer	Motorola Semiconductor
File Size	576.61 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF7S19100NR1_MotorolaSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: MRF7S19100NBR1, MRF7S19100NR1. Please refer to the document for exact specifications by model.
Additional preview pages of the MRF7S19100NBR1 datasheet.

MRF7S19100NBR1 Product details

Description

10 μF, 35 V Tantalum Capacitor 10 μF, 50 V Chip Capacitors 5.1 pF Chip Capacitors 8.2 pF Chip Capacitors 10 pF Chip Capacitor 1 KΩ, 1/4 W Chip Resistor 10 KΩ, 1/4 W Chip Resistor 10 Ω, 1/4 W Chip Resistor Part Number T491D106K035AT GRM55DR61H106KA88L 600B5R1BT250XT 600B8R2BT250XT 600B100BT250XT CRCW12061001F100 CRCW12061002F100 CRCW120610R0F100 Manufacturer Kemet Murata ATC ATC ATC Vishay Vishay Vishay MRF7S19100NR1 MRF7S19100NBR1 4 RF Device Data Freescale Semiconductor www.DataSheet4U.com R

Features

100% PAR Tested for Guaranteed Output Power Capability.
Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Integrated ESD Protection.
Designed for Digital Predistortion Error Correction Systems.
200°C Capable Plastic Package.
RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel MRF7S19100NR1 MRF7S19100NBR1 1930 - 1990 MHz, 29 W AVG. , 28 V.

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Published: Dec 30, 2006 |