MRF6S9160HR3 Datasheet (Freescale Semiconductor) - RF Power Field Effect Transistors

MRF6S9160HR3, RF Power Field Effect Transistors

Ferrite Beads, Small 47 pF Chip Capacitors 0.8- 8.0 pF Variable Capacitors, Gigatrim 2.7 pF Chip Capacitor 15 pF Chip Capacitors 12 pF Chip Capacitors 4.3 pF Chip Capacitors 8.2 pF Chip Capacitor 3.9 pF Chip Capacitors 0.6- 4.5 pF Variable Capacitor, Gigatrim 22 pF Chip Capacitor 1 μF, 50 V Tantalum

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6S9160H Rev.

1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz.

Suitable for multicarrier amplifier applications.

Typical Single - Carrier N - CDMA Performance @ 880 MHz: VDD = 28 Volts, IDQ = 1200 mA, Pout = 35 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traf

MRF6S9160HR3 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Internally Matched for Ease of Use

* Qualified Up to a Maximum of 32 VDD Operation

* Integrated ESD Protection

* Lower Thermal Resistance Package

* Low Gold Plating Thickness