FP2250QFN PACKAGED LOW NOISE / HIGH LINEARITY PHEMT

Filtronic

FP2250QFN Description

www.DataSheet4U.com Preliminary Data Sheet FP2250QFN PACKAGED LOW NOISE, HIGH LINEARITY PHEMT * .
AND APPLICATIONS The FP2250QFN is a high performance, leadless, encapsulated packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGa.

FP2250QFN Features

* 29 dBm Output Power at 1-dB Compression
* 17 dB Power Gain at 2 GHz
* 1.0 dB Noise Figure at 2 GHz
* 42 dBm Output IP3
* 50% Power-Added Efficiency

FP2250QFN Applications

* The FP2250QFN is a high performance, leadless, encapsulated packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 2250 µm Schottky barrier gate, defined by electronbeam photolithography. The reces

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Datasheet Details

Part number: FP2250QFN
Manufacturer: Filtronic
File Size: 233.15 KB
Datasheet: FP2250QFN_Filtronic.pdf
Description: PACKAGED LOW NOISE / HIGH LINEARITY PHEMT

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PACKAGED LOW NOISE HIGH LINEARITY PHEMT Filtronic

Filtronic FP2250QFN-like datasheet