LP6872 - 0.5W POWER PHEMT

Filtronic Compound Semiconductors

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Datasheet Details

Part number	LP6872
Manufacturer	Filtronic Compound Semiconductors
File Size	38.59 KB
Description	0.5W POWER PHEMT
Datasheet	LP6872_FiltronicCompoundSemiconductors.pdf

LP6872 Product details

Description

AND APPLICATIONS DIE SIZE: 14.6X19.7 mils (370x500 µm) DIE THICKNESS: 3.0 mils (75 µm) BONDING PADS: 1.9X2.4 mils (50x60 µm) The LP6872 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µ m by 720 µ m Schottky barrier gate.The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances.The epitaxial structure and processing have been optimiz

Features

S.
27 dBm Output Power at 1-dB Compression at 18 GHz.
9.5 dB Power Gain at 18 GHz.
55% Power-Added Efficiency DRAIN BOND PAD (2X) SOURCE BOND PAD (2x) LP6872 GATE BOND PAD (2X).

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Published: Mar 22, 2005 |