LP6836 - MEDIUM POWER PHEMT

Filtronic Compound Semiconductors

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Datasheet Details

Part number	LP6836
Manufacturer	Filtronic Compound Semiconductors
File Size	35.54 KB
Description	MEDIUM POWER PHEMT
Datasheet	LP6836_FiltronicCompoundSemiconductors.pdf

LP6836 Product details

Description

AND APPLICATIONS DIE SIZE: 14.2X13.0 mils (360x330 µm) DIE THICKNESS: 3.9 mils (100 µm) BONDING PADS: 1.9X1.9 mils (50x50 µm) The LP6836 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µ m by 360 µ m Schottky barrier gate.The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances.The epitaxial structure and processing have been optimi

Features

S.
25 dBm Output Power at 1-dB Compression at 18 GHz.
9.5 dB Power Gain at 18 GHz.
55% Power-Added Efficiency DRAIN BOND PAD SOURCE BOND PAD (2x) LP6836 GATE BOND PAD.

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Published: Mar 22, 2005 |