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LP6836P100 - Packaged 0.25W Power PHEMT

The LP6836P100 by Filtronic Compound Semiconductors is a Packaged 0.25W Power PHEMT. Below is the official datasheet preview.

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Official preview page of the LP6836P100 Packaged 0.25W Power PHEMT datasheet (Filtronic Compound Semiconductors).

Datasheet Details

Part number LP6836P100
Manufacturer Filtronic Compound Semiconductors
File Size 23.10 KB
Description Packaged 0.25W Power PHEMT
Datasheet download datasheet LP6836P100_FiltronicCompoundSemiconductors.pdf
Additional preview pages of the LP6836P100 datasheet.

LP6836P100 Product details

Description

AND APPLICATIONS The LP6836P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 360 µm Schottky barrier gate.The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances.The epitaxial structure and processing have been optimized for reliable high-power applications.The LP6836 also

Features

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