FP750SOT343 PACKAGED LOW NOISE/ MEDIUM POWER PHEMT

Filtronic Compound Semiconductors

Description

PRELIMINARY DATA SHEET FP750SOT343 PACKAGED LOW NOISE, MEDIUM POWER PHEMT * .
AND APPLICATIONS The FP750SOT343 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (pHEMT) intended for applications.

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Datasheet Specifications

Part number: FP750SOT343
Manufacturer: Filtronic Compound Semiconductors
File Size: 55.20 KB
Datasheet: FP750SOT343_FiltronicCompoundSemiconductors.pdf
Description: PACKAGED LOW NOISE/ MEDIUM POWER PHEMT

Features

* 0.5 dB Noise Figure at 2 GHz
* 21 dBm P-1dB 2 GHz
* 17 dB Power Gain at 2 GHz
* 33 dBm IP3 at 2 GHz
* 45% Power-Added-Efficiency

Applications

* The FP750SOT343 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (pHEMT) intended for applications requiring low noise figure, medium output power and/or high dynamic range. It utilizes a 0.25 µm x 750 µm Schottky barrier gate, defined by electron-beam photolithogra

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FP750SOT343 PACKAGED LOW NOISE MEDIUM POWER PHEMT Filtronic Compound Semiconductors

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