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NDS9925A Dual N-Channel MOSFET

NDS9925A Description

May 1998 NDS9925A Dual N-Channel Enhancement Mode Field Effect Transistor General .
SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

NDS9925A Features

* 4.5 A, 20 V. RDS(ON) = 0.060 Ω @ VGS = 4.5 V RDS(ON) = 0.075 Ω @ VGS = 2.7 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. SOT-23 SuperSOTTM -6 SuperSOTTM -8 SO-8 SOT-

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Dual N-Channel MOSFET Fairchild
Fairchild NDS9925A-like datasheet