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NDS9952A Dual N&P-Channel MOSFET

NDS9952A Description

February 1996 NDS9952A Dual N & P-Channel Enhancement Mode Field Effect Transistor General .
These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS techno.

NDS9952A Features

* N-Channel 3.7A, 30V, RDS(ON)=0.08Ω @ VGS=10V. P-Channel -2.9A, -30V, RDS(ON)=0.13Ω @ VGS=-10V. High density cell design or extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual (N & P-Channel) MOSFET in surface mount package. ________________

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Dual N &P-Channel MOSFET Fairchild
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