NDB6030L N-Channel MOSFET

Fairchild

Description

June 1996 NDP6030L / NDB6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General .
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS techno.

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Datasheet Specifications

Part number: NDB6030L
Manufacturer: Fairchild
File Size: 357.87 KB
Datasheet: NDB6030L_FairchildSemiconductor.pdf
Description: N-Channel MOSFET

Features

* 52 A, 30 V. RDS(ON) = 0.0135 Ω @ VGS=10 V RDS(ON) = 0.020 Ω @ VGS=4.5 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High density cell design for extremely low RDS(ON)

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NDB6030L N-Channel MOSFET Fairchild

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