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NDB6060L N-Channel FET

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Description

NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General .
Features 48A, 60V.

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Features

* 48A, 60V. RDS(ON) = 0.025Ω @ VGS = 5V. These logic level N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, prov

Applications

* such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Low drive requirements allowing operation directly from logic drivers. VGS(TH) < 2.0V. Critical DC electrical parameter

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