Datasheet Specifications
- Part number
- NDB6060L
- Manufacturer
- ON Semiconductor ↗
- File Size
- 448.91 KB
- Datasheet
- NDB6060L-ONSemiconductor.pdf
- Description
- N-Channel FET
Description
NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General .Features
* 48A, 60V. RDS(ON) = 0.025Ω @ VGS = 5V. These logic level N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provApplications
* such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Low drive requirements allowing operation directly from logic drivers. VGS(TH) < 2.0V. Critical DC electrical parameterNDB6060L Distributors
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