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NDB301RA - Integrated Driver and MOSFET

Download the NDB301RA datasheet PDF. This datasheet also covers the NDB301RA-NIKO variant, as both devices belong to the same integrated driver and mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The NDB301RA integrates a MOSFET driver, high-side MOSFET and low-side MOSFET into a single package.

DC buck power conversion applications.

Key Features

  • Capable of Average Currents up to 60 A.
  • Capable of Switching at Frequencies up to 1 MHz.
  • Compatible with 5V PWM Input.
  • Good 30V HS/LS MOSFET Characteristics.
  • The QFN5x5 Package of Low Impedance design.
  • Zero Current Detection for High Efficiency at Light Load.
  • Internal Bootstrap Diode.
  • Under voltage Protection.
  • Thermal Shutdown.
  • Supports Intel® Power State 4.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NDB301RA-NIKO-SEM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NDB301RA
Manufacturer NIKO-SEM
File Size 1.14 MB
Description Integrated Driver and MOSFET
Datasheet download datasheet NDB301RA Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NIKO-SEM Integrated Driver and MOSFET NDB301RA PQFN31-5x5 Halogen-Free & Lead-Free Description The NDB301RA integrates a MOSFET driver, high-side MOSFET and low-side MOSFET into a single package. The driver and MOSFETs have been optimized for high-current DC−DC buck power conversion applications. The NDB301RA integrated solution greatly reduces package parasitics and board space compared to a discrete component solution. Features • Capable of Average Currents up to 60 A. • Capable of Switching at Frequencies up to 1 MHz. • Compatible with 5V PWM Input. • Good 30V HS/LS MOSFET Characteristics • The QFN5x5 Package of Low Impedance design. • Zero Current Detection for High Efficiency at Light Load. • Internal Bootstrap Diode. • Under voltage Protection. • Thermal Shutdown.