NDB5060L Datasheet - Fairchild

NDB5060L N-Channel MOSFET

These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withsta.

NDB5060L Features

* 26 A, 60 V. RDS(ON) = 0.05 Ω @ VGS= 5 V RDS(ON) = 0.035 Ω @ VGS= 10 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High dens

NDB5060L_FairchildSemiconductor.pdf