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SSS7N60B 600V N-Channel MOSFET

SSS7N60B Description

SSP7N60B/SSS7N60B SSP7N60B/SSS7N60B 600V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

SSS7N60B Features

* 7.0A, 600V, RDS(on) = 1.2Ω @VGS = 10 V Low gate charge ( typical 38 nC) Low Crss ( typical 23 pF) Fast switching 100% avalanche tested Improved dv/dt capability TO-220F package isolation = 4.0kV (Note 6) D G G DS TO-220 SSP Ser

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600V N-Channel MOSFET Fairchild Semiconductor
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