SSS70N10A Datasheet - Fairchild Semiconductor

SSS70N10A, Advanced Power MOSFET

www.datasheet4u.com Advanced Power MOSFET

Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µA (Max. ) @ VDS = 100V Lower RDS(ON) : 0.018 Ω (Typ. ) Ο SSS70N10A BVDSS = 100 V RDS(on) = 0.023 Ω ID = 28 A TO-22

SSS70N10A_Fairchild Semiconductor.pdf