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SSS1N60B N-Channel MOSFET

SSS1N60B Description

www.DataSheet4U.com SSP1N60B/SSS1N60B November 2001 SSP1N60B/SSS1N60B 600V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

SSS1N60B Features

* 1.0A, 600V, RDS(on) = 12Ω @VGS = 10 V Low gate charge ( typical 5.9 nC) Low Crss ( typical 3.6 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 SSP Series GD S TO-220F SSS Series S Absolute Maximum R

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N-Channel MOSFET Fairchild Semiconductor
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