SSP3N90A Datasheet - Fairchild Semiconductor

SSP3N90A, Advanced Power MOSFET

Advanced Power MOSFET

Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max. ) @ VDS = 900V Low RDS(ON) : 4.679 Ω (Typ. ) 1 2 3 SSP3N90A BVDSS = 900 V RDS(on) = 6.2 Ω ID = 3 A TO-220 1.Gate 2. Drain 3. Source

SSP3N90A_FairchildSemiconductor.pdf