SSP10N60A - Advanced Power MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	SSP10N60A
Manufacturer	Fairchild Semiconductor
File Size	639.49 KB
Description	Advanced Power MOSFET
Datasheet	SSP10N60A_FairchildSemiconductor.pdf

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max. ) @ VDS = 600V Low RDS(ON) : 0.646 Ω (Typ. ) SSP10N60A BVDSS = 600 V RDS(on) = 0.8 Ω ID = 9 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 oC) Drain.

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Published: Dec 1, 2005 |