SSP3N80A Datasheet - Fairchild Semiconductor

SSP3N80A, Advanced Power MOSFET

Advanced Power MOSFET

Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max. ) @ VDS = 800V Low RDS(ON) : 3.800 Ω (Typ. ) 1 2 3 SSP3N80A BVDSS = 800 V RDS(on) = 4.8 Ω ID = 3 A TO-220 1.Gate 2. Drain 3. Source

SSP3N80A_FairchildSemiconductor.pdf