RF1S630SM N-Channel Power MOSFETs

Fairchild Semiconductor

Description

Data Sheet IRF630, RF1S630SM January 2002 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field.

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Datasheet Specifications

Part number: RF1S630SM
Manufacturer: Fairchild Semiconductor
File Size: 127.15 KB
Datasheet: RF1S630SM-FairchildSemiconductor.pdf
Description: N-Channel Power MOSFETs

Features

* 9A, 200V
* rDS(ON) = 0.400Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Related Literature - TB334 “Guidelines for

Applications

* such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17412. Ordering Info

RF1S630SM Distributors

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RF1S630SM N-Channel Power MOSFETs Fairchild Semiconductor

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