RF1S630SM - N-Channel Power MOSFETs

Fairchild Semiconductor

Datasheet Details

Part number	RF1S630SM
Manufacturer	Fairchild ↗ Semiconductor
File Size	127.15 KB
Description	N-Channel Power MOSFETs
Datasheet	RF1S630SM-FairchildSemiconductor.pdf

9A, 200V.
rDS(ON) = 0.400Ω.
Single Pulse Avalanche Energy Rated.
SOA is Power Dissipation Limited.
Nanosecond Switching Speeds.
Linear Transfer Characteristics.
High Input Impedance.
Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S Packaging JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE JEDEC TO-263AB GATE SOURCE DRAIN (FLANGE) ©2002 Fairchild Semiconduct.

📁 RF1S630SM Similar Datasheet

RF1S25N06SM - 25A/ 60V/ 0.047 Ohm/ N-Channel Power MOSFETs (Intersil Corporation)
RF1S30N06LE - N-Channel Enhancement-Mode Power MOSFETs (Harris)
RF1S30N06LESM - 30A/ 60V/ ESD Rated/ 0.047 Ohm/ Logic Level N-Channel Power MOSFETs (Intersil Corporation)
RF1S30P05 - P-Channel Enhancement-Mode Power MOSFET (Harris)
RF1S30P05SM - 30A/ 50V/ 0.065 Ohm/ P-Channel Power MOSFETs (Intersil Corporation)
RF1S30P06 - 30A/ 60V/ 0.065 Ohm/ P-Channel Power MOSFETs (Intersil Corporation)
RF1S30P06SM - P-Channel Power MOSFET (Intersil Corporation)
RF1S40N10LESM - 40A/ 100V/ 0.040 Ohm/ Logic Level N-Channel Power MOSFETs (Intersil Corporation)

Other Datasheets by Fairchild Semiconductor

RF1S60P03 - 60A/ 30V/ Avalanche Rated/ P-Channel Enhancement-Mode Power MOSFETs
RF1S60P03SM - 60A/ 30V/ Avalanche Rated/ P-Channel Enhancement-Mode Power MOSFETs
RF1S640 - 18A/ 200V/ 0.180 Ohm/ N-Channel Power MOSFETs
RF1S640SM - 18A/ 200V/ 0.180 Ohm/ N-Channel Power MOSFETs
RF1S22N10SM - 22A/ 100V/ 0.080 Ohm/ N-Channel Power MOSFETs
RF1S25N06 - 25A/ 60V/ 0.047 Ohm/ N-Channel Power MOSFETs

Published: Feb 22, 2015 |